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We study the role of coherence in closed and open quantum batteries. We obtain upper bounds to the work performed or energy exchanged by both closed and open quantum batteries in terms of coherence. Specifically, we show that the energy storage can be bounded by the Hilbert-Schmidt coherence of the density matrix in the spectral basis of the unitary operator that encodes the evolution of the battery. We also show that an analogous bound can be obtained in terms of the battery's Hamiltonian coherence in the basis of the unitary operator by evaluating their commutator. We apply these bounds to a 4-state quantum system and the anisotropic XY Ising model in the closed system case, and the Spin-Boson model in the open case. 

We present a systematic construction of probes into the dynamics of isospectral ensembles of Hamiltonians by the notion of Isospectral twirling, expanding the scopes and methods of ref. [1]. The relevant ensembles of Hamiltonians are those defined by salient spectral probability distributions. The Gaussian Unitary Ensembles (GUE) describes a class of quantum chaotic Hamiltonians, while spectra corresponding to the Poisson and Gaussian Diagonal Ensemble (GDE) describe non chaotic, integrable dynamics. We compute the Isospectral twirling of several classes of important quantities in the analysis of quantum many-body systems: Frame potentials, Loschmidt Echos, OTOCs, Entanglement, Tripartite mutual information, coherence, distance to equilibrium states, work in quantum batteries and extension to CP-maps. Moreover, we perform averages in these ensembles by random matrix theory and show how these quantities clearly separate chaotic quantum dynamics from non chaotic ones. 

Interface‐type (IT) metal/oxide Schottky memristive devices have attracted considerable attention over filament‐type (FT) devices for neuromorphic computing because of their uniform, filament‐free, and analog resistive switching (RS) characteristics. The most recent IT devices are based on oxygen ions and vacancies movement to alter interfacial Schottky barrier parameters and thereby control RS properties. However, the reliability and stability of these devices have been significantly affected by the undesired diffusion of ionic species. Herein, a reliable interface‐dominated memristive device is demonstrated using a simple Au/Nb‐doped SrTiO₃(Nb:STO) Schottky structure. The Au/Nb:STO Schottky barrier modulation by charge trapping and detrapping is responsible for the analog resistive switching characteristics. Because of its interface‐controlled RS, the proposed device shows low device‐to‐device, cell‐to‐cell, and cycle‐to‐cycle variability while maintaining high repeatability and stability during endurance and retention tests. Furthermore, the Au/Nb:STO IT memristive device exhibits versatile synaptic functions with an excellent uniformity, programmability, and reliability. A simulated artificial neural network with Au/Nb:STO synapses achieves a high recognition accuracy of 94.72% for large digit recognition from MNIST database. These results suggest that IT resistive switching can be potentially used for artificial synapses to build next‐generation neuromorphic computing.